2SK3075 2001-02-02 1/3 toshiba field effect transistor silicon n channel mos type 2SK3075 rf power mosfet for vhf ? and uhf ? band power amplifier output power : p o 7.5w power gain : g p 11 .7db drain efficiency : d 50% maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 25 v drain current i d 5 a drain power dissipation p d* 20 w channel temperature t ch 150 c storage temperature range t stg ? 45~150 c *: tc = 25c when mounted on a 1.6mm glass epoxy pcb marking unit: mm jedec ? eiaj ? toshiba 2 ? 5n1a toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eaa1
2SK3075 2001-02-02 2/3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit output power p o 7.5 ? ? w drain efficiency d 50 ? ? % power gain g p v ds = 9.6v iidle = 50ma (v gs = adjust) f = 520mhz, p i = 500mw z g = z l = 50 ? 11.7 ? ? db gate threshold voltage v th v ds = 9.6v, i d = 0.5ma 1.0 1.5 2.0 v drain cut-off current i dss v ds = 20v, v gs = 0 ? ? 10 a gate-source leakage current i gss v gs = 10v, v ds = 0 ? ? 5 a handling precaution when handling individual devices, be sure that working desks, human bodies and soldering iron are protected against electrostatic electricity. rf output power test fixture
2SK3075 2001-02-02 3/3 caution these are only typical curves and devices are not necessarily guaranteed at these curves.
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